Fabrication of optically smooth surface on the cleavage of porous silicon by gas cluster ion irradiation

被引：9

作者：

Ieshkin, A. E. ^{[1
]}

Svyakhovskiy, S. E. ^{[1
]}

Chernysh, V. S. ^{[1
]}

机构：

[1] Lomonosov Moscow State Univ, Fac Phys, Moscow 119991, Russia

来源：

VACUUM | 2018年 / 148卷

基金：

俄罗斯科学基金会;

关键词：

Photonic crystals; Gas cluster ions; Porous silicon; Smoothing; Nanostructures; PHOTONIC-CRYSTAL; WAVE-GUIDES; FILMS; LIGHT;

D O I：

10.1016/j.vacuum.2017.11.034

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrochemical etching of Si is a promising method of fabricating multilayer photonic structures with hundreds of layers. Nevertheless, the natural cleavage of the porous silicon structure has roughness and then high optical scattering that embarrasses the usage of porous silicon in optical devices. In this study, gas cluster ion beam irradiation was suggested as a polishing technique. The bombardment results in surface smoothing and consequent enhancement of light reflection without significant difference in sputtering rate of layers with different porosity. Increasing irradiation dose results in different behavior of porous layers: densification of low-porosity structures and nano-rods formation in high-porosity layers. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：272 / 275

页数：4

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