Band offsets in Zn1-xCdxSe/ZnSe multiple quantum wells

被引：17
|
作者：
Pellegrini, V
Tredicucci, A
Beltram, F
Vanetti, L
Lazzarino, M
Franciosi, A
机构：
[1] INFM,I-56126 PISA,ITALY
[2] IST NAZL FIS MAT,LAB TECNOL AVANZATE SUPERFICI & CATALISI,I-34012 TRIESTE,ITALY
来源：
JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 02期
关键词：
D O I：
10.1063/1.360874
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The conduction-band discontinuity in Zn1-xCdxSe/ZnSe multiple-quantum-well structures grown by molecular-beam epitaxy and pseudomorphically strained to ZnSe were evaluated via electrical and intersubband absorption measurements for 0.23 less than or equal to x less than or equal to 0.33. A variation between 165 +/- 14 and 253 +/- 14 meV is found in the cadmium concentrations range analyzed. Our results are consistent with a valence-band contribution to the band-gap difference Q(v) = 0.33 +/- 0.03 in the alloy series. (C) 1996 American Institute of Physics.
引用
收藏
页码：929 / 933
页数：5
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