Material realization of topological crystalline insulators: Role of strain and spin-orbit coupling

被引:9
作者
Niu, Chengwang [1 ]
Dai, Ying [1 ]
Ma, Yandong [1 ]
Yu, Lin [1 ]
Huang, Baibiao [1 ]
机构
[1] Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Peoples R China
基金
美国国家科学基金会;
关键词
Topological Crystalline Insulator; Band Inversion; Strain; Spin-Orbit Coupling; Dirac Point; SINGLE DIRAC CONE; PHASE-TRANSITION;
D O I
10.1166/mex.2013.1112
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Taking into consideration of the mirror symmetry gives rise to a new phase of quantum matter, called topological crystalline insulator (TCI). Here, using SnTe and PbTe as the examples, we give detailed insight into the effects of spin-orbit coupling (SOC) and strain on the formation of the TCI. A strain-induced band inversion, without any SOC, is shown. The SOC, however, is indispensable for achieving the TCI phase in real materials and can promote the process of the band inversion. Detailed surface state analysis reveals that topological surface state is thickness dependent and the Dirac point can locate precise on or slightly away from the mirror-symmetry point. Our results pave a way of the material realization of new topological crystalline insulator.
引用
收藏
页码:159 / 165
页数:7
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