In-plane c-axis oriented barium hexaferrite films prepared by magnetron sputtering

被引：15
|
作者：
Meng, Siqin [1 ]
Yue, Zhenxing [1 ]
Li, Longtu [1 ]
机构：
[1] Tsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
来源：
MATERIALS LETTERS | 2012年 / 86卷
关键词：
Magnetic materials; Sputtering; Epitaxial growth; Thin films; FERRITE THIN-FILMS; MICROWAVE; PHASE;
D O I：
10.1016/j.matlet.2012.07.023
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In-plane c-axis oriented M-type barium hexaferrite (BaM) films were grown on a-plane sapphire (11 (2) over bar0) substrates by radio frequency magnetron sputtering with ex-situ annealing. Oxygen in sputtering atmosphere played a critical role in the c-axis orientation growth of BaM films. With incorporation of 10% O-2 during sputtering, in-plane c-axis highly oriented BaM films with high hysteresis loop squareness (M-r/M-s similar to 0.94) along in-plane easy axis and low M-r/M-s similar to 0.08 along in-plane hard axis was achieved. In contrast, films sputtered without O-2 incorporation showed poor magnetic anisotropy and low hysteresis loop squareness along both directions. The oxygen induced formation of oriented hematite intermediate phase was found, which was supposed to be responsible for the in-plane orientation growth of BaM grains. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：92 / 95
页数：4
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