Dislocations in manganese-doped InSb

被引：9
作者：
Sanygin, V. P. [1 ]
Filatov, A. V. [1 ]
Izotov, A. D. [1 ]
Pashkova, O. N. [1 ]
机构：
[1] Russian Acad Sci, NS Kurnakov Gen & Inorgan Chem Inst, Leninskii Pr 31, Moscow 119991, Russia
来源：
INORGANIC MATERIALS | 2012年 / 48卷 / 10期
基金：
俄罗斯基础研究基金会;
关键词：
FERROMAGNETISM; ZN; MN;
D O I：
10.1134/S0020168512100093
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electron probe X-ray microanalysis data for quenched InSbaOE (c) Mn > samples demonstrate that most of the manganese goes to doping of dislocations in the semiconductor lattice. The manganese-doped dislocations in InSb determine the magnetic and electrical properties of the material at room temperature and above. According to magnetic measurements, this is accompanied by the formation of several magnetic phases. Codoping of InSb with manganese and zinc with the aim of neutralizing one of the magnetic phases allowed us to obtain a ferromagnetic semiconductor with a Curie temperature of 320 K.
引用
收藏
页码：977 / 983
页数：7
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