Oxygen-related defects: minority carrier lifetime killers in n-type Czochralski silicon wafers for solar cell application

被引：3
|
作者：
Kolevatov, I. [1 ,2 ,3 ]
Osinniy, V. [3 ]
Herms, M. [3 ]
Loshachenko, A. [2 ]
Shlyakhov, I. [2 ]
Kveder, V. [4 ]
Vyvenko, O. [2 ]
机构：
[1] Univ Oslo, Ctr Mat Sci & Nanotechnol, N-0316 Oslo, Norway
[2] St Petersburg State Univ, VA Fok Inst Phys, St Petersburg 198504, Russia
[3] Bosch Solar Energy AG, D-99310 Arnstadt, Germany
[4] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 8 | 2015年 / 12卷 / 08期
关键词：
Czochralski silicon; solar cells; oxygen precipitates;
D O I：
10.1002/pssc.201400293
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Many authors (Haunschild et al., Phys. Status Solidi RRL 5, 199-201 (2012) [1]) reported about areas in Cz-Si with an extremely low lifetime of minority carriers after high temperature stages of solar cell manufacture. In such regions the minority carrier lifetime may be fallen 100 times after annealing, what leads to a considerable drop in the solar cell efficiency. In present work the electrical and structural properties of phosphorus doped Bosch Cz-Si wafers with degrading areas were studied by means of photoluminescence, deep level transient spectroscopy, transmission electron microscopy, electron energy loss spectroscopy and Fourier transform infrared spectroscopy. Based on these data it is concluded that the dominant recombination channel in the degrading areas is related to strained oxygen precipitates. We found electronic states of traps which may cause their formation. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1108 / 1110
页数：3
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