Lowpressure chemical vapor deposition synthesis of hexagonal boron nitride on polycrystalline metal foils

被引：27

作者：

Gibb, Ashley ^{[1
,2
,3
]}

Alem, Nasim ^{[2
,3
]}

Zettl, Alex ^{[2
,4
]}

机构：

[1] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

[4] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2013年 / 250卷 / 12期

关键词：

chemical vapor deposition; h-BN; hexagonal boron nitride; GRAPHENE FILMS; HIGH-QUALITY; MONOLAYER; LAYER; NANOTUBES; GROWTH; GRAPHITE; NI(111);

D O I：

10.1002/pssb.201300088

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The two-dimensional sp(2)-bonded material hexagonal boron nitride (h-BN) has unique electronic, thermal, mechanical, and chemical properties. It has recently found use as an ideal substrate for graphene-based electronic devices. We here describe synthesis of mono- to few-layer h-BN films using low pressure chemical vapor deposition (LPCVD) from borazine, with nickel, copper and platinum employed as catalytic substrates, and transfer of some of these films using a non-polymer method. Characterization of the films via Raman spectroscopy and transmission electron microscopy (TEM) is performed. Chemical vapor deposition synthesis of hexagonal boron nitride from borazine using metallic substrates. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2727 / 2731

页数：5

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