Activation energies of the acceptor-bound excitons and the donor-acceptor pairs in nitrogen-doped p-type ZnSe, p-type ZnSySe1-y, and p-type Zn1-xMgxSySe1-y epitaxial films grown on GaAs (100) substrates

被引：1

作者：

Kim, H. J. ^{[1
]}

Kim, B. J. ^{[1
]}

Kim, T. W. ^{[1
]}

Yoo, K. H. ^{[2
,3
]}

机构：

[1] Hanyang Univ, Div Elect & Comp Engn, Adv Semicond Res Ctr, Seoul 133791, South Korea

[2] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea

[3] Kyung Hee Univ, Res Inst Basic Sci, Seoul 130701, South Korea

来源：

APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 09期

关键词：

Activation energy; exciton; p-type ZnSe; p-type ZnSySe1-y; p-type Zn1-xMgxSySe1-y; MOLECULAR-BEAM EPITAXY; HETEROSTRUCTURES; MICROSCOPY; EPILAYERS;

D O I：

10.1016/j.apsusc.2008.12.066

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Nitrogen-doped p-type ZnSe, p-type ZnSySe1 (y), and p-type Zn-1 xMgxSySe1 (y) epilayers were grown on n-type GaAs ( 1 0 0) substrates by molecular beam epitaxy. Photoluminescence (PL) spectra for the p-type ZnSe and the lattice-matched p-type ZnS0.06Se0.94, and p-type Zn0.92Mg0.08S0.12Se0.88 epilayers showed a deep acceptor bound exciton emission and a donor-acceptor pair emission. Temperature-dependent PL measurements were carried out to determine the activation energies of these states. The activation energies of the acceptor-bound excitons and the donor-acceptor pairs were determined to be 40 and 65 meV in the p-type ZnSe epilayer, 20 and 45 meV in the p-type ZnS0.06Se0.94, and 45 and 43 meV in the p-type Zn0.92Mg0.08S0.12Se0.88 epilayers. (c) 2009 Published by Elsevier B.V.

引用

页码：5048 / 5051

页数：4

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