Influence of High-Frequency Near-Field Coupling between Magnetic Components on EMI Filter Design

被引：0
|
作者：
Wang, Ruxi [1 ,3 ]
Blanchette, Handy Fortin [2 ]
Mu, Mingkai [1 ]
Boroyevich, Dushan [1 ]
Mattavelli, Paolo [1 ]
机构：
[1] Virginia Polytech Inst & State Univ, Ctr Power Elect Syst, Blacksburg, VA 24061 USA
[2] Ecole Technol Super, Montreal, PQ H3C 1K3, Canada
[3] Global Res Ctr Gen Elect Co, Niskayuna, NY 12309 USA
来源：
2013 TWENTY-EIGHTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2013) | 2013年
关键词：
Magnetic Coupling; EMI Filter; Near-field Probe; Mutual Coupling;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work presents a detailed analysis of magnetic component coupling and its influence on EMI filter design. In contrast with other literature, the novelty of this paper reveals that magnetic coupling should be divided into two categories: low-frequency coupling and high-frequency coupling. It is proven that coupling is frequency related and high-frequency near-field stray flux distribution can be differ dramatically from low frequency condition. The change of the near-field stray flux distribution is caused by displacement current from stray capacitors. By using the Biot-Savart equation, high-frequency near-field distribution can be well predicted and matched with experimental results. In addition, single stage DM LC filters are utilized to demonstrate the influence of high-frequency coupling.
引用
收藏
页码：1500 / 1507
页数：8
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