Effect of electric field relaxation on the V-I curve

被引:21
作者
Zhang, P
Ren, C
Ding, SY [1 ]
Ding, Q
Lin, FY
Zhang, YH
Luo, H
Yao, XX
机构
[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[3] Nanjing Univ, Ctr Adv Studies Sci & Technol Microstruct, Nanjing 210093, Peoples R China
关键词
D O I
10.1088/0953-2048/12/8/316
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effects of sweeping rate of applied current (dI/dt) on the characteristic (V-I) and electric field relaxation (V-t) curves have been investigated numerically as well as experimentally. The calculation is based on the nonlinear electric field diffusion equation, while the experiment is conducted by electric transport measurements of V-I and V-t curves on three Ag-Bi-2223 tape samples. It is found that the V-I curves shift toward smaller current with increasing dI/dt and V decays with time apparently. We show that a certain dI/dt causes a highly spatially varied electric field which is the natural result of the fact that flux lines can only diffuse over barriers with certain velocity. We also show that the, electric field diffusion causes the two phenomena in the bulk sample: (1) the V-I curve is affected by the sweeping rate of the applied current; (2) the resistance relaxes with time.
引用
收藏
页码:571 / 576
页数:6
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