Interstitial faulted dislocation dipole formation in sapphire (α-Al2O3)

被引：2
作者：
Lagerloef, K. P. D. [1 ]
Castaing, J. [1 ,2 ]
Heuer, A. H. [1 ]
机构：
[1] Case Western Reserve Univ, Dept Mat Sci & Engn, Cleveland, OH 44106 USA
[2] CNRS UMR 171, Ctr Rech & Restaurat Musees France, F-75001 Paris, France
来源：
PHILOSOPHICAL MAGAZINE | 2013年 / 93卷 / 1-3期
关键词：
sapphire; dislocation dipole; interstitial point defect; deformation; BASAL SLIP; DISSOCIATION; ENERGETICS; MODEL;
D O I：
10.1080/14786435.2012.702231
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
While both vacancy and interstitial edge-trapped perfect dislocation dipoles form with equal probability during high temperature basal deformation of sapphire, faulted dipoles are invariably interstitial in character. The most likely origin of this asymmetry is the different energy associated with the point defects needed to be ejected into the bulk crystal for a dipole to be annihilated. Interstitial point defects are much more energetic than vacancy defects, leading to immediate supersaturation, and rapid condensation of the interstitials into a faulted dipole segment, rather than being absorbed by the bulk crystal.
引用
收藏
页码：152 / 161
页数：10
相关论文
共 23 条
  • [1] On basal slip and basal twinning in sapphire (alpha-Al2O3) .1. Basal slip revisited
    BildeSorensen, JB
    Lawlor, BF
    Geipel, T
    Pirouz, P
    Heuer, AH
    Lagerlof, KPD
    [J]. ACTA MATERIALIA, 1996, 44 (05) : 2145 - 2152
  • [2] Deformation of sapphire (α-Al2O3) by basal slip and basal twinning below 700° C
    Castaing, J
    He, A
    Lagerlöf, KPD
    Heuer, AH
    [J]. PHILOSOPHICAL MAGAZINE, 2004, 84 (11) : 1113 - 1125
  • [3] α-Al2O3 sapphire and rubies deformed by dual basal slip at intermediate temperatures (900-1300 °C) II. Dissociation and stacking faults
    Castillo Rodriguez, M.
    Castaing, J.
    Munoz, A.
    Veyssiere, P.
    Dominguez Rodriguez, A.
    [J]. ACTA MATERIALIA, 2009, 57 (10) : 2879 - 2886
  • [4] DEFECT ENERGETICS IN ALPHA-AL2O3 AND RUTILE TIO2
    CATLOW, CRA
    JAMES, R
    MACKRODT, WC
    STEWART, RF
    [J]. PHYSICAL REVIEW B, 1982, 25 (02): : 1006 - 1026
  • [5] SHELL-MODEL CALCULATION OF SOME POINT-DEFECT PROPERTIES IN ALPHA-AL2O3
    DIENES, GJ
    WELCH, DO
    FISCHER, CR
    HATCHER, RD
    LAZARETH, O
    SAMBERG, M
    [J]. PHYSICAL REVIEW B, 1975, 11 (08): : 3060 - 3070
  • [6] On basal slip and basal twinning in sapphire (alpha-Al2O3) .3. HRTEM of the twin/matrix interface
    Geipel, T
    BildeSorensen, JB
    Lawlor, BF
    Pirouz, P
    Lagerlof, KPD
    Heuer, AH
    [J]. ACTA MATERIALIA, 1996, 44 (05) : 2165 - 2174
  • [7] SOLUTION OF MGO, CAO, AND TIO2, IN ALPHA-AL2O3
    GRIMES, RW
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1994, 77 (02) : 378 - 384
  • [8] Linear-scaling density-functional simulations of charged point defects in Al2O3 using hierarchical sparse matrix algebra
    Hine, N. D. M.
    Haynes, P. D.
    Mostofi, A. A.
    Payne, M. C.
    [J]. JOURNAL OF CHEMICAL PHYSICS, 2010, 133 (11)
  • [9] Supercell size scaling of density functional theory formation energies of charged defects
    Hine, N. D. M.
    Frensch, K.
    Foulkes, W. M. C.
    Finnis, M. W.
    [J]. PHYSICAL REVIEW B, 2009, 79 (02)
  • [10] Hine N.D.M., 2011, COMMUNICATION
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