Modeling and optimization of CdS/CuIn1-xGaxSe2 structure for solar cells applications

被引：11

作者：

Arbouz, H. ^{[1
]}

Aissat, A. ^{[1
,2
]}

Vilcot, J. P. ^{[3
]}

机构：

[1] Univ Blida 1, Fac Technol, LATSI Lab, BP270, Blida 09000, Algeria

[2] Univ Blida 1, Fac Sci, LASICOM Lab, BP270, Blida 09000, Algeria

[3] Univ Sci & Technol Lille1, UMR CNRS 8520, Inst Elect Microelect & Nanotechnol, Ave Poincare,CS 60069, F-59652 Villeneuve Dascq, France

来源：

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY | 2016年 / 41卷 / 45期

关键词：

Materials; Semiconductor; Solar cell; Photovoltaic; SIMULATION; LAYER; GAAS;

D O I：

10.1016/j.ijhydene.2016.06.104

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This work deals with the modeling and optimization of the CuInGaSe/CdS based structure for photovoltaic applications. We took into consideration the effect of the gallium concentration and the temperature on the strain, band gap energy, absorption and efficiency of the structure. It has been demonstrated that increasing the gallium concentration increases the ban gap energy, while increasing temperature decreases it. These two parameters vary the efficiency significantly. For x = 30% and T = 300 K, the band gap energy is equal to 1.15 eV with a deformation of 0.5% and efficiency around 20%. We have also found that at this value of the band gap energy the structure absorbs most of the incident photons. Then to achieve a reliable cell based on CuInGaSe/CdS it is adequate to find a compromise between the gallium concentration in the alloy, the temperature and the strain. (C) 2016 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.

引用

页码：20987 / 20992

页数：6

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