Characterizations of polycrystalline SiGe films on SiO2 grown by gas-source molecular beam deposition

被引：0
|
作者：
Mitsui, M. [1 ]
Tamoto, M. [1 ]
Arimoto, K. [1 ]
Yamanaka, J. [1 ]
Nakagawa, K. [1 ]
Sato, T. [2 ]
Usami, N. [3 ]
Sawano, K. [4 ]
Shiraki, Y. [4 ]
机构：
[1] Univ Yamanashi, Fac Engn, Ctr Crystal Sci & Tech, Kofu, Yamanashi 4008511, Japan
[2] Univ Yamanashi, Clean Energy Res Ctr, Kofu, Yamanashi 4008511, Japan
[3] Tohoku Univ, IMR, Aoba Ku, Sendai, Miyagi 9808577, Japan
[4] Musashi Inst Tech, Adv Res Labs, Res Ctr Silicon Nano Sci, Setagaya Ku, Tokyo 1580082, Japan
来源：
THIN SOLID FILMS | 2008年 / 517卷 / 01期
关键词：
Polycrystalline; Silicon germanium; Molecular beam deposition;
D O I：
10.1016/j.tsf.2008.08.023
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have studied the early stage and successive stage of the growth of poly-Si1-xGex films in gas-source molecular beam deposition (GSMBD), in which disilane and germane are utilized as source gases. Solid-source molecular beam deposition (SSMBD) was also used for the film formation in comparison with GSMBD. In GSMBD, the grain size is larger than that in SSMBD in the early stage of the growth and the grains after growth have columnar structures. In SSMBD, there are many small grains in the early stage of the growth, and the successive growth formed grains with the shape of triangular pyramid. (c) 2008 Elsevier B.V. All rights reserved
引用
收藏
页码：254 / 256
页数：3
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