TCR control of Ni-Cr resistive film deposited by DC magnetron sputtering

被引：23

作者：

Chuang, Nai-Chuan ^{[1
]}

Lin, Jyi-Tsong ^{[1
]}

Chen, Huey-Ru ^{[2
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung, Taiwan

[2] Walsin Technol Corp, Kaohsiung, Taiwan

来源：

VACUUM | 2015年 / 119卷

关键词：

TCR; Magnetron sputtering; Thin film resistor; Ni-Cr film; ELECTRICAL-PROPERTIES; THIN-FILMS; MICROSTRUCTURE;

D O I：

10.1016/j.vacuum.2015.05.026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The temperature coefficient of resistance (TCR) is a major and important characteristic of thin film resistors. In this study, we focus on the dependence of TCR on different Ni-Cr film thickness and different annealing conditions. The electron mean free path (MFP) of Ni-Cr film has been determinate. Field Emission Scanning Electron Microscopy (FE-SEM) has been used in studying the morphology of the Ni-Cr film; X-ray diffraction (XRD) has been similarly employed in studying the transformation of the crystallite phase. The TCR performance is stable as the Ni-Cr film thickness is thicker than the electron MFP, and increases slightly as the annealing temperature increases. The 30 nm thickness of Ni-Cr film was annealed at 300 degrees C; in this phase, metastable amorphous and crystalline film was formed. We obtained the thin film resistors of low TCR under +/- 5 ppm/degrees C at -55 and 125 degrees C. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：200 / 203

页数：4

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