Image based in situ electron-beam drift detection by silicon photodiodes in scanning-electron microscopy and an electron-beam lithography system

被引：2

作者：

Kuo, Yi-Hung ^{[1
]}

Wu, Cheng-Ju ^{[1
]}

Kuo, Fu-Tsun ^{[1
]}

Yen, Jia-Yush ^{[1
]}

Chen, Yung-Yaw ^{[2
]}

机构：

[1] Natl Taiwan Univ, Dept Mech Engn, Taipei 106, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

来源：

MICROELECTRONIC ENGINEERING | 2013年 / 103卷

关键词：

Electron-beam lithography; Electron-beam drift; Back scattered electron; Electron detectors;

D O I：

10.1016/j.mee.2012.08.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A silicon-photodiode detector can be used to sense the position of the electron beam in a scanning-electron microscope. In order to validate the implementation of a electron beam drift detector, a silicon photodiode was constructed with a low profile and small working distance. The performance in detecting the drift of the electron beam over time was analyzed. It was also shown that a back scattered-electron image can be created with electron scanning, which allows the development of highly sensitive in situ beam position feedback in the electron-beam direct-write lithography system. (C) 2012 Elsevier B.V. All rights reserved.

引用

收藏

页码：137 / 143

页数：7

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