Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes

被引：7
作者：
Park, Tae Hoon [1 ]
Kim, Tae Geun [1 ]
机构：
[1] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2015年 / 120卷 / 03期
基金：
新加坡国家研究基金会;
关键词：
PERFORMANCE ENHANCEMENT; HOLE-INJECTION; BLUE LEDS; POLARIZATION; BARRIER; DROOP;
D O I：
10.1007/s00339-015-9345-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, we designed and simulated InGaN/AlGaN-based near-ultraviolet light-emitting diode (NUV LED) epi-structures to obtain high internal quantum efficiency and low efficiency droop. When the conventional epi-structure of an last quantum barrier and an electron blocking layer (EBL) was replaced with a graded last quantum barrier and multi-step EBLs, the NUV LED showed 35 % higher internal quantum efficiency and 25 % more suppression of efficiency droop than the conventional NUV LED. Furthermore, a detailed study of the grading effect of the EBL revealed that 10-step EBLs increase performance when compared to other structures. These results are attributed to the polarization-induced effect, which reduces the electron leakage and increases the hole injection efficiency.
引用
收藏
页码：841 / 846
页数：6
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