Full Area Laser Doped Boron Emitter Silicon Solar Cells

被引：0

作者：

Dahlinger, M. ^{[1
]}

Eisele, S. J. ^{[1
]}

Lill, P. C. ^{[1
]}

Koehler, J. R. ^{[1
]}

Werner, J. H. ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Photovolta Ipv, D-70569 Stuttgart, Germany

来源：

2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2012年

关键词：

n-Type; laser doping; boron; sputtering; silicon;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We present full area laser doped boron emitter n-type silicon solar cells using sputtered boron as dopant source. Quasi-steady-state photo conductance decay measurements show a low emitter saturation current density J(0e) and an open circuit voltage limit of V-oc,V-lim = 702 mV for a 128 Omega/sq emitter proving the high quality of the laser doped boron emitters. The first 4 cm(2) cell yield efficiencies up to eta = 16.7% without optimization of the cell structure.

引用

页码：1029 / 1031

页数：3

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