InAs/GaAs quantum dots on GaAs-on-V-grooved-Si substrate with high optical quality in the 1.3 μm band

被引：36

作者：

Wan, Yating ^{[1
]}

Li, Qiang ^{[1
]}

Geng, Yu ^{[1
]}

Shi, Bei ^{[1
]}

Lau, Kei May ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 08期

关键词：

TEMPERATURE-DEPENDENCE;

D O I：

10.1063/1.4929441

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report self-assembled InAs/GaAs quantum dots (QDs) grown on a specially engineered GaAs-on-V-grooved-Si substrate by metal-organic vapor phase epitaxy. Recessed pockets formed on V-groove patterned Si (001) substrates were used to prevent most of the hetero-interfacial stacking faults from extending into the upper QD active region. 1.3 mu m room temperature emission from high-density (5.6 x 10(10) cm(-2)) QDs has been obtained, with a narrow full-width-at-half-maximum of 29 meV. Optical quality of the QDs was found to be better than those grown on conventional planar offcut Si templates, as indicated by temperature-dependent photoluminescence analysis. Results suggest great potential to integrate QD lasers on a Si complementary-metal-oxide-semiconductor compatible platform using such GaAs on Si templates. (C) 2015 AIP Publishing LLC.

引用

页数：4

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