The Effects of Dual-Active-Layer Modulation on a Low-Temperature Solution-Processed Oxide Thin-Film Transistor

被引：30

作者：

Jeong, Woong Hee ^{[1
]}

Kim, Kyung Min ^{[1
]}

Kim, Dong Lim ^{[1
]}

Rim, You Seung ^{[1
]}

Kim, Hyun Jae ^{[1
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

Dual-active-layer (DAL) modulation; In-versus-Zn ratio; oxide semiconductor; solution process; thickness; HIGH-PERFORMANCE; FABRICATION;

D O I：

10.1109/TED.2012.2198064

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We applied dual-active-layer (DAL) modulation to solution-processed AlInZnO (AIZO)/InZnO (IZO) DAL thin-film transistors (TFTs) to realize high performance at 350 degrees C. The electrical characteristics of the DAL TFTs were affected by the In-versus-Zn ratio of each channel and the thickness of the IZO. This caused a difference in the carrier concentrations of the two channels and also changed the energy barrier height at the junction between the channels. A DAL TFT with optimized carrier concentration and energy barrier height yielded a competitive field-effect mobility of 5.62 cm(2)/V.s, a high ON/OFF ratio of 9.0 x 10(6), and a steep subthreshold swing of 0.53 V/dec.

引用

页码：2149 / 2152

页数：4

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