High-Performance Solution-Processed Zinc-Tin-Oxide Thin-Film Transistors Employing Ferroelectric Copolymers Fabricated at Low Temperature for Transparent Flexible Displays

被引：22

作者：

Ha, Tae-Jun ^{[1
]}

机构：

[1] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 139701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 12期

基金：

新加坡国家研究基金会;

关键词：

Metal-oxide semiconductor; low-temperature deposition; ferroelectric copolymer; transparent flexible displays; SOL-GEL; STABILITY;

D O I：

10.1109/LED.2016.2623318

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of the charge-screening method to obtain high-performance solution-processed zinc-tin-oxide (ZTO) thin-film transistors (TFTs) for transparent flexible displays is investigated. The proposed ZTO TFTs employing solution-processed ferroelectric, poly (vinylidenefluoride-co- trifluoroethylene) (PVDF-TrFE) copolymer exhibit excellent switching characteristics, including a shift in the threshold voltage toward 0 V and a decrease in the OFF-state current and the sub-threshold swing. The long-term stability of ZTO/PVDF-TrFE TFTs against electrical bias combined with visible-light illumination at 60 degrees C is also demonstrated. The proposed method is based on an all-solution-process that was carried out below 100 degrees C except the metal deposition, and this allows the ZTO TFT matrix to be integrated into transparent display backplanes on flexible substrates.

引用

页码：1586 / 1589

页数：4

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