Low-threshold loss-coupled laser diode by new grating fabrication technique

被引：20

作者：

Park, C ^{[1
]}

Kim, JS ^{[1
]}

Oh, DK ^{[1
]}

Jang, DH ^{[1
]}

Park, CY ^{[1
]}

Ahn, JH ^{[1
]}

Kim, HM ^{[1
]}

Choo, HR ^{[1
]}

Kim, H ^{[1
]}

Pyun, KE ^{[1
]}

机构：

[1] ELECT & TELECOMMUN RES INST,COMPOUND SEMICOND DEPT,OPTELECT SECT,TAEJON 305350,SOUTH KOREA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 01期

关键词：

loss-coupled distributed feedback laser diode; low-threshold current; side-mode suppression ratio;

D O I：

10.1109/68.554158

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we introduce a novel fabrication method to make InGaAs absorptive first-order grating for loss-coupled distribued feedback laser diode (DFB-LD) using reactive ion etching, By this technique, it is possible to control duty rate of the first-order grating, A very-low-threshold current of 6 mA was obtained from our loss-coupled LD at the wavelength of 1.547 mu m, which was unusually high for a loss-coupled LD because of the excessive light absorption, In addition to the low-threshold current, it shows high SMSR and longitudinal single-mode yield as high as 50 dB and 90%, respectively.

引用

页码：22 / 24

页数：3

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