High responsitivity intrinsic photoconductors based on AlxGa1-xN

被引：147

作者：

Lim, BW

Chen, QC

Yang, JY

Khan, MA

机构：

[1] APA Optics Inc., Blaine, MN 55449

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 26期

关键词：

D O I：

10.1063/1.115998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter reports on the fabrication and characterization of visible-blind ultraviolet photoconductors using single-crystal AlxGa1-xN layers deposited on basal plane sapphire substrates. With aluminum mole fractions ranging from 5% to 61%, the long-wavelength cutoff can be varied from 350 to 240 nm. Photoresponsitivities as high as several hundred amperes per watt were measured with 10 mu m interelectrode spacing. (C) 1996 American Institute of Physics.

引用

收藏

页码：3761 / 3762

页数：2

相关论文

共 7 条

[1] VISIBLE-BLIND ULTRAVIOLET PHOTODETECTORS BASED ON GAN P-N-JUNCTIONS [J].

CHEN, Q ;

KHAN, MA ;

SUN, CJ ;

YANG, JW .

ELECTRONICS LETTERS, 1995, 31 (20) :1781-1782

[2]

KHAN M, 1993, APPL PHYS LETT, V56, P1257

[3] TEMPERATURE ACTIVATED CONDUCTANCE IN GAN/ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS OPERATING AT TEMPERATURES UP TO 300-DEGREES-C [J].

KHAN, MA ;

SHUR, MS ;

KUZNIA, JN ;

CHEN, Q ;

BURM, J ;

SCHAFF, W .

APPLIED PHYSICS LETTERS, 1995, 66 (09) :1083-1085

[4] HIGH-RESPONSIVITY PHOTOCONDUCTIVE ULTRAVIOLET SENSORS BASED ON INSULATING SINGLE-CRYSTAL GAN EPILAYERS [J].

KHAN, MA ;

KUZNIA, JN ;

OLSON, DT ;

VANHOVE, JM ;

BLASINGAME, M ;

REITZ, LF .

APPLIED PHYSICS LETTERS, 1992, 60 (23) :2917-2919

[5] SCHOTTKY-BARRIER PHOTODETECTOR BASED ON MG-DOPED P-TYPE GAN FILMS [J].

KHAN, MA ;

KUZNIA, JN ;

OLSON, DT ;

BLASINGAME, M ;

BHATTARAI, AR .

APPLIED PHYSICS LETTERS, 1993, 63 (18) :2455-2456

[6] HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-GREEN-LIGHT-EMITTING DIODES [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (12) :8189-8191

[7] InGaN-based multi-quantum-well-structure laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (1B) :L74-L76