Photoinduced band-bending effect of low temperature GaAs on AlGaAs/InGaAs/GaAs modulation-doped transistors

被引：1
作者：
Folkes, PA [1 ]
Gumbs, G
Xu, W
机构：
[1] USA, Res Lab, Adelphi, MD 20783 USA
[2] CUNY Hunter Coll, Dept Phys, New York, NY 10021 USA
[3] Univ Wollongong, Inst Superconduct & Elect Mat, Wollongong, NSW, Australia
[4] CUNY Grad Sch & Univ Ctr, New York, NY 10036 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 01期
关键词：
D O I：
10.1063/1.1483132
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low temperature photoluminescence (PL) measurements on pseudomorphic modulation-doped transistors (PHEMTs) with a low-temperature (LT) GaAs layer in the GaAs buffer layer clearly show a decrease in the quantum well PL transition energies compared to a PHEMT with no LT GaAs. Self-consistent calculations of the quantum well PL transition energies and oscillator strengths show that the observed decrease in PL energies can be attributed to a larger photoinduced band bending in PHEMTs with an undoped GaAs/LT GaAs interface compared to the photoinduced band bending in PHEMTs with an undoped GaAs/semi-insulating GaAs interface. (C) 2002 American Institute of Physics.
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页码：632 / 634
页数：3
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