Visualizing the Anomalous Charge Density Wave States in Graphene/NbSe2Heterostructures

被引：25

作者：

Chen, Yu ^{[1
,2
]}

Wu, Lishu ^{[2
]}

Xu, Hai ^{[3
,4
,5
]}

Cong, Chunxiao ^{[6
,7
]}

Li, Si ^{[8
]}

Feng, Shun ^{[2
]}

Zhang, Hongbo ^{[2
]}

Zou, Chenji ^{[2
]}

Shang, Jingzhi ^{[1
,2
]}

Yang, Shengyuan A. ^{[8
]}

Loh, Kian Ping ^{[3
]}

Huang, Wei ^{[1
,9
,10
]}

Yu, Ting ^{[2
]}

机构：

[1] Northwestern Polytech Univ, Shaanxi Inst Flexible Elect SIFE, Xian 710129, Peoples R China

[2] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

[3] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore

[4] Chinese Acad Sci, Fine Mech & Phys, Changchun Inst Opt, Changchun 130033, Peoples R China

[5] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100040, Peoples R China

[6] Fudan Univ, Sch Informat Sci & Technol, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

[7] Fudan Univ, Acad Engn & Technol, Shanghai 200433, Peoples R China

[8] Singapore Univ Technol & Design, Res Lab Quantum Mat, Singapore 487372, Singapore

[9] Nanjing Tech Univ NanjingTech, Key Lab Flexible Elect KLOFE, Nanjing 211800, Peoples R China

[10] Nanjing Tech Univ NanjingTech, Inst Adv Mat IAM, Nanjing 211800, Peoples R China

来源：

ADVANCED MATERIALS | 2020年 / 32卷 / 45期

基金：

国家重点研发计划; 中国国家自然科学基金;

关键词：

2D transition metal dichalcogenides; anomalous charge density wave; graphene; NbSe(2)heterostructures; interfacial electron doping; phase transitions; GRAPHENE; METAL; SPECTROSCOPY;

D O I：

10.1002/adma.202003746

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Metallic layered transition metal dichalcogenides (TMDs) host collective many-body interactions, including the competing superconducting and charge density wave (CDW) states. Graphene is widely employed as a heteroepitaxial substrate for the growth of TMD layers and as an ohmic contact, where the graphene/TMD heterostructure is naturally formed. The presence of graphene can unpredictably influence the CDW order in 2D CDW conductors. This work reports the CDW transitions of 2H-NbSe(2)layers in graphene/NbSe(2)heterostructures. The evolution of Raman spectra demonstrates that the CDW phase transition temperatures (T-CDW) of NbSe(2)are dramatically decreased when capped by graphene. The induced anomalous short-range CDW state is confirmed by scanning tunneling microscopy measurements. The findings propose a new criterion to determine theT(CDW)through monitoring the line shape of the A(1g)mode. Meanwhile, the 2D band is also discovered as an indicator to observe the CDW transitions. First-principles calculations imply that interfacial electron doping suppresses the CDW states by impeding the lattice distortion of 2H-NbSe2. The extraordinary random CDW lattice suggests deep insight into the formation mechanism of many collective electronic states and possesses great potential in modulating multifunctional devices.

引用

页数：7

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