Initial results of CdS/CuInTe2 heterojunction formed by flash evaporation

被引：3

作者：

El Assali, K ^{[1
]}

Boustani, M ^{[1
]}

Bekkay, T ^{[1
]}

Khiara, A ^{[1
]}

Outzourhit, A ^{[1
]}

Ameziane, EL ^{[1
]}

机构：

[1] Fac Sci Semlalia, Dept Phys, Lab Phys Solides & Couches Minces, Marrakech, Morocco

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1999年 / 59卷 / 04期

关键词：

CdS; CuInTe2; thin films; ternary chalcopyrite; flash evaporation; heterojunction;

D O I：

10.1016/S0927-0248(99)00053-7

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The CuInTe2 thin films is one of the most attractive semiconductors for solar cells applications, since its direct band gap energy (Eg approximate to 1 eV) is suitable as an absorber in photovoltaic conversion. In this letter the CuInTe2 thin films are prepared by flash evaporation technique. X-ray diffraction measurements on the as-deposited CuInTe2 film showed that these films consist mainly of the chalcopyrite phase. The junction formation in the n-CdS/p-CuInTe2 cell has been investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：349 / 353

页数：5

共 6 条

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