Al+ Implanted 4H-SiC p+-i-n Diodes: Forward Current Negative Temperature Coefficient

被引：17

作者：

Nipoti, Roberta ^{[1
]}

Moscatelli, Francesco ^{[1
]}

De Nicola, Pietro ^{[2
]}

机构：

[1] CNR IMM Bologna, I-4038 Bologna, Italy

[2] Lab Micro & Submicro Enabling Technol Emilia Roma, I-40129 Bologna, Italy

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 08期

关键词：

4H-SiC; forward current; ion-implantation; p-i-n diode; specific contact resistance; temperature coefficient; OHMIC CONTACTS;

D O I：

10.1109/LED.2013.2269863

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical 4H-Silicon Carbide p(+)-i-n diodes are obtained by a selective area 1.5 x 10 (20) cm(-3) Al+ ion implantation of the anodes. These diodes are fabricated with identical steps except post-implantation annealing that is 1650 degrees C/25 min and 1950 degrees C/5 min. Electrical characterization in the temperature range 25 degrees C-290 degrees C is performed. The 1650 degrees C/25 min diodes have forward currents with a positive temperature coefficient. The 1950 degrees C/5 min diodes have forward current characteristics with a crossover point from a positive to a negative temperature coefficient that makes such characteristics almost stable versus temperature.

引用

页码：966 / 968

页数：3

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