P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy

被引：37

作者：

Novikov, SV ^{[1
]}

Edmonds, KW ^{[1
]}

Giddings, AD ^{[1
]}

Wang, KY ^{[1
]}

Staddon, CR ^{[1
]}

Campion, RP ^{[1
]}

Gallagher, BL ^{[1
]}

Foxon, CT ^{[1
]}

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 03期

关键词：

D O I：

10.1088/0268-1242/19/3/L02

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cubic (zinc-blende) Ga1-xMnxN layers were grown by plasma-assisted molecular beam epitaxy on GaAs (001) substrates. Some of the structures also contained cubic AlN buffer layers. Auger electron spectroscopy and secondary ion mass spectroscopy studies clearly confirmed the incorporation of Mn into cubic GaN, the Mn being uniformly distributed through the layer. X-ray diffraction studies demonstrated that the Mn-doped GaN films are cubic and do not show phase separation up to a Mn concentration of x < 0.1. p-type conductivity for the cubic Ga1-xMnxN layers was observed for a wide range of the Mn doping levels. The measured hole concentration at room temperature depends nonlinearly on the Mn incorporation and varies from 3 x 10(16) to 5 x 10(18) cm(-3).

引用

页码：L13 / L16

页数：4

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