Fabrication and Properties of Amorphous In-Ga-Zn-O Material and Transistors

被引：0

作者：

Kaczmarski, J. ^{[1
]}

Taube, A. ^{[1
,2
]}

Dynowska, E. ^{[1
,3
]}

Dyczewski, J. ^{[3
]}

Ekielski, M. ^{[1
]}

Kaminska, E. ^{[1
]}

Piotrowska, A. ^{[1
]}

机构：

[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

[2] WUT, Inst Microelect & Optoelect, PL-00662 Warsaw, Poland

[3] PAS, Inst Phys, PL-02668 Warsaw, Poland

来源：

ACTA PHYSICA POLONICA A | 2013年 / 124卷 / 05期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In-Ga-Zn-O thin films were fabricated by means of reactive RF magnetron sputtering. Mechanism of free electrons generation via oxygen vacancies formation is proposed to determine the relationship between oxygen content in the deposition atmosphere and the transport properties of IGZO thin films. The depletion-mode a-IGZO thin film transistor with field-effect mobility of 12 cm(2)/(Vs) has been demonstrated.

引用

页码：855 / 857

页数：3