Coherent transient effects in a InGaAs1-x/GaAs semiconductor quantum dot

We present a theoretical analysis to examine the strain effect on light and heavy hole energy levels and role of exciton and bi-excitons on the absorptive optical mutation in InxGa1-xAs/GaAs quantum dots (QDs) near the band edge. The analysis is based upon the strain induced Luttinger Hamiltonian and time dependent perturbation technique of the coherent radiation-semiconductor interaction model for a three-level system under near band gap resonant excitation regime. The relaxation and dephasing mechanisms phenomenological have been incorporated. Numerical estimations of refractive and absorptive optical mutation have been made for a InGaAs/GaAs quantum dot duly shined by femtosecond pulse Ti: sapphire laser. Our results are found to agree qualitatively with available experimental observations.