Ge quantum well optoelectronic devices for light modulation, detection, and emission

被引：6
作者：
Chaisakul, P. [1 ]
Marris-Morini, D. [1 ]
Isella, G. [2 ]
Chrastina, D. [2 ]
Rouifed, M. -S. [1 ]
Frigerio, J. [2 ]
Vivien, L. [1 ]
机构：
[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France
[2] Politecn Milan, Dipartimento Fis, L NESS, I-22100 Como, Italy
来源：
SOLID-STATE ELECTRONICS | 2013年 / 83卷
关键词：
Ge/SiGe; Multiple quantum wells; Electro-absorption modulator; Photodetector; Light emitting diode; Waveguide; WAVE-GUIDE PHOTODETECTOR; ELECTROABSORPTION MODULATOR; SILICON; HETEROSTRUCTURES; LAYERS; SI;
D O I：
10.1016/j.sse.2013.01.024
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on light modulation, detection, and emission characteristics of Ge/SiGe multiple quantum well waveguides using the same epitaxial growth and fabrication steps. As an electro-absorption modulator, the device exhibits the capability to achieve high extinction ratio with low swing bias voltages and high modulation bandwidth. As a photodetector, dark currents, optical responsivities, and high speed performance have been studied. High speed light detection up to 10 Gb/s has been obtained simultaneously with good values of optical responsivity. As a light emitting diode, direct gap electroluminescence (EL) from the Ge/SiGe MQW waveguides has been experimentally demonstrated at room temperature within the spectral range of light modulation and detection. (c) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：92 / 98
页数：7
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