Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN:Si layers

被引：3

作者：

Osinnykh, I. V. ^{[1
,3
]}

Malin, T. V. ^{[1
]}

Plyusnin, V. F. ^{[2
,3
]}

Zhuravlev, K. S. ^{[1
,3
]}

Ber, B. Ya ^{[4
]}

Kazantsev, D. Yu ^{[4
]}

机构：

[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, 13 Lavrentieva Av, Novosibirsk 630090, Russia

[2] Russian Acad Sci, Voevodsky Inst Chem Kinet & Combust, Siberian Branch, 3 Inst Skaya, Novosibirsk 630090, Russia

[3] Novosibirsk State Univ, Pirogova 2, Novosibirsk 630090, Russia

[4] Russian Acad Sci, Ioffe Phys Tech Inst, 26 Polytekhn Skaya Str, St Petersburg 194021, Russia

来源：

18TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS | 2017年 / 816卷

关键词：

GAN; ALGAN; ALN; SI;

D O I：

10.1088/1742-6596/816/1/012002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report photoluminescence investigations of heavily doped AlxGa1-xN:Si films grown by molecular beam epitaxy on sapphire substrates. The wide intensive defect-related band dominates in the photoluminescence spectra of AlxGa1-xN: Si films with the Al content higher than 0.46 covering the whole visible spectral range. This band is attributed to donor-acceptor transitions. The acceptor ionization energy of about 1.87 eV for heavily doped AlN:Si was obtained, decrease of Al content leads to decrease of the acceptor ionization energy. The donor was assigned to the Si atom on the Ga/Al site; the acceptor might be the (2-/3-) transition level of the V-Al.

引用

页数：6

共 18 条

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