Transient IR imaging of light and flexible microelectronic devices

被引:5
作者
Radivojevic, Z
Kassamakov, I
Oinonen, M
Saarikko, H
Seppanen, H
Vihinen, P
机构
[1] Nokia Res Ctr, FIN-00045 Helsinki, Finland
[2] Univ Helsinki, Dept Phys Sci, FIN-00014 Helsinki, Finland
[3] Univ Helsinki, Helsinki Inst Phys, FIN-00014 Helsinki, Finland
[4] Univ Helsinki, Detector Lab, FIN-00014 Helsinki, Finland
关键词
D O I
10.1016/j.microrel.2005.01.013
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An advanced method for the quality assessment of microelectronic assemblies has been developed by combining IR thermography and several techniques for stimulation by transient temperature fields. The method exploits singularities in materials and interconnections by the observation of perturbations in transient heat flow phenomena. For very light microelectronic systems like chip-on-flex assemblies a method was developed taking advantage of short stimulations by photoflash. Such a method provided possibilities for detecting defects on the level of a single interconnection with a pitch of 80 mu m. In addition, a programmable array of thermo-electric converters, prepared for the testing of a large variety of microelectronic assemblies, was also used to perform transient IR imaging for chip-on-flex assemblies. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:116 / 123
页数:8
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