Low energy electron-enhanced etching of GaN/Si in hydrogen direct current plasma

被引：28
作者：
Gillis, HP
Choutov, DA
Martin, KP
Pearton, SJ
Abernathy, CR
机构：
[1] UNIV CALIF LOS ANGELES, DEPT CHEM & BIOCHEM, LOS ANGELES, CA 90095 USA
[2] UNIV FLORIDA, DEPT MAT SCI & ENGN, GAINESVILLE, FL 32611 USA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1996年 / 143卷 / 11期
关键词：
D O I：
10.1149/1.1837223
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We have demonstrated low energy electron-enhanced etching (LE4) of 1.0 mu m thick films of GaN on (100) Si substrates with good anisotropy. The etch rate increased from 70 to 525 Angstrom/min as the sample temperature increased from 50 to 250 degrees C. Auger spectra indicated that surface stoichiometry was essentially unchanged during LE4 at process temperatures below 100 degrees C; samples etched at higher temperatures showed excess gallium at the surface.
引用
收藏
页码：L251 / L253
页数：3
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