Semiconductor Nanolasers

被引：15

作者：

Saxena, D. ^{[1
]}

Mokkapati, S. ^{[1
]}

Jagadish, C. ^{[1
]}

机构：

[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys & Engn, Canberra, ACT 0200, Australia

来源：

IEEE PHOTONICS JOURNAL | 2012年 / 4卷 / 02期

基金：

澳大利亚研究理事会;

关键词：

Semiconductor nanowire lasers; nanolasers; plasmonic lasers;

D O I：

10.1109/JPHOT.2012.2189201

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent progress in the field of semiconductor nanolasers is discussed. New designs have emerged that eliminate the need for a conventional Fabry-Perot cavity, bringing down the physical dimensions of the lasers below the diffraction limit. Semiconductor nanolasers are critical components for nanophotonics and offer possible integration with Si nanoelectronics.

引用

页码：582 / 585

页数：4

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