Semiconductor Nanolasers

被引：15
|
作者：
Saxena, D. [1 ]
Mokkapati, S. [1 ]
Jagadish, C. [1 ]
机构：
[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys & Engn, Canberra, ACT 0200, Australia
来源：
IEEE PHOTONICS JOURNAL | 2012年 / 4卷 / 02期
基金：
澳大利亚研究理事会;
关键词：
Semiconductor nanowire lasers; nanolasers; plasmonic lasers;
D O I：
10.1109/JPHOT.2012.2189201
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Recent progress in the field of semiconductor nanolasers is discussed. New designs have emerged that eliminate the need for a conventional Fabry-Perot cavity, bringing down the physical dimensions of the lasers below the diffraction limit. Semiconductor nanolasers are critical components for nanophotonics and offer possible integration with Si nanoelectronics.
引用
收藏
页码：582 / 585
页数：4
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