The effect of Mo back contact ageing on Cu(In,Ga)Se2 thin-film solar cells

被引：33
|
作者：
Salome, Pedro M. P. [1 ]
Fjallstrom, Viktor [1 ]
Hultqvist, Adam [1 ]
Szaniawski, Piotr [1 ]
Zimmermann, Uwe [1 ]
Edoff, Marika [1 ]
机构：
[1] Uppsala Univ, Angstrom Solar Ctr, Angstrom Lab, SE-75121 Uppsala, Sweden
来源：
PROGRESS IN PHOTOVOLTAICS | 2014年 / 22卷 / 01期
关键词：
Cu(In; Ga)Se-2; CIGS; thin-film solar cells; molybdenum (Mo); chalcopyrites; BASE-LINE; MICROSTRUCTURE;
D O I：
10.1002/pip.2360
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this work, we investigate the effect of ageing Mo-coated substrates in a dry and N-2 flooded cabinet. The influence was studied by preparing Cu(In,Ga)Se-2 solar cells and by comparing the electrical performance with devices where the Mo layer was not aged. The measurements used for this study were current-voltage (J-V), external quantum efficiency (EQE), secondary ion mass spectroscopy (SIMS) and capacitance-voltage (C-V). It was concluded that devices prepared with the aged Mo layer have, in average, an increase of 0.8% in efficiency compared with devices that had a fresh Mo layer. Devices with aged Mo exhibited a nominal increase of 12.5mV of open circuit voltage, a decrease of 1.1mA/cm(-2) of short circuit current and a fill factor increase of 2.4%. Heat treatment of fresh Mo layers in oxygen atmosphere was also studied as an alternative to ageing and was shown to provide a similar effect to the aged device's performance. Copyright (c) 2013 John Wiley & Sons, Ltd.
引用
收藏
页码：83 / 89
页数：7
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