Vibration modes and interface abruptness of CdSe quantum dots, embedded either in BeTe or ZnSe

被引：0

作者：

Geurts, J ^{[1
]}

Bass, U

Mahapatra, S

Brunner, K

Muck, T

Wagner, V

机构：

[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

[2] Jacobs Univ Bremen, D-28759 Bremen, Germany

来源：

JOURNAL DE PHYSIQUE IV | 2006年 / 132卷

关键词：

D O I：

10.1051/jp4:2006132058

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present a Raman spectroscopy study of the vibration modes of CdSe quantum dots, embedded either in BeTe or ZnSe. The spectra reflect different degrees of interface abruptness. Atomically sharp interfaces are obtained in the case of the BeTe matrix, especially when the interface bonds are chosen to be Cd-Te type. In contrast, noticeable intermixing occurs for the ZnSe matrix. The CdSe-BeTe vibration modes are described by ab initio calculations. The vibrations of CdSe-ZnSe are explained in terms of ternary (Cd,Zn)Se modes with increasing Cd content for increasing nominal CdSe coverage.

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页码：307 / 310

页数：4

相关论文

共 9 条

[1] The characterization of semiconductor layer and interface quality with special reference to Raman spectroscopy [J].

Geurts, J .

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1996, 32 (04) :185-224

[2] Effect of interfacial bonding on the structural and vibrational properties of InAs/GaSb superlattices [J].

Herres, N ;

Fuchs, F ;

Schmitz, J ;

Pavlov, KM ;

Wagner, J ;

Ralston, JD ;

Koidl, P ;

Gadaleta, C ;

Scamarcio, G .

PHYSICAL REVIEW B, 1996, 53 (23) :15688-15705

[3]

Ivanov S. V., 2000, P 8 INT S NAN PHYS T

[4] Evidence for 2D precursors and interdiffusion in the evolution of self-assembled CdSe quantum dots on ZnSe [J].

Kim, CS ;

Kim, M ;

Furdyna, JK ;

Dobrowolska, M ;

Lee, S ;

Rho, H ;

Smith, LM ;

Jackson, HE ;

James, EM ;

Xin, Y ;

Browning, ND .

PHYSICAL REVIEW LETTERS, 2000, 85 (05) :1124-1127

[5] Broadening of submonolayer CdSe sheets in CdSe ZnSe superlattices studied by x-ray diffraction [J].

Kyutt, RN ;

Toropov, AA ;

Sorokin, SV ;

Shubina, TV ;

Ivanov, SV ;

Karlsteen, M ;

Willander, M .

APPLIED PHYSICS LETTERS, 1999, 75 (03) :373-375

[6] Influence of the growth procedure on the Cd distribution in CdSe/ZnSe heterostructures: Stranski-Krastanov versus two-dimensional islands [J].

Litvinov, D ;

Rosenauer, A ;

Gerthsen, D ;

Kratzert, P ;

Rabe, M ;

Henneberger, F .

APPLIED PHYSICS LETTERS, 2002, 81 (04) :640-642

[7] Vibration dynamics and interfacial chemistry of the CdSe/BeTe interface [J].

Muck, T ;

Wagner, JW ;

Hansen, L ;

Wagner, V ;

Geurts, J ;

Ivanov, SV .

PHYSICAL REVIEW B, 2004, 69 (24) :245314-1

[8] Raman scattering from CdSe/ZnSe self-assembled quantum dot structures [J].

Rho, H ;

Jackson, HE ;

Lee, S ;

Dobrowolska, M ;

Furdyna, JK .

PHYSICAL REVIEW B, 2000, 61 (23) :15641-15644

[9]

SPITZER J, 1995, J APPL PHYS, V77, P8711