Cu2ZnSnS4:graphene oxide nanocomposites based photoresponse devices

被引：10

作者：

Al-Hazmi, Faten ^{[1
]}

Yakuphanoglu, F. ^{[1
,2
,3
]}

机构：

[1] King Abdulaziz Univ, Fac Sci Girls, Dept Phys, Jeddah 21413, Saudi Arabia

[2] Firat Univ, Dept Phys, Fac Sci, TR-23169 Elazig, Turkey

[3] Firat Univ, Nanosci & Nanotechnol Lab, TR-23169 Elazig, Turkey

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2015年 / 653卷

关键词：

Sensors; Photodiode; Nanocomposites; BARRIER DIODES SBDS; THIN-FILMS; SOLAR-CELLS; VOLTAGE CHARACTERISTICS; CONDUCTANCE TECHNIQUE; CAPACITANCE-VOLTAGE; SERIES RESISTANCE; INTERFACE STATES; SCHOTTKY DIODES; FREQUENCY;

D O I：

10.1016/j.jallcom.2015.08.238

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Graphene oxide: Cu2ZnSnS4 nanocomposites were synthesized by the chemical method to fabricate photodiodes. The structural properties of the nanocomposites were analyzed using a Scanning electron microscopy (SEM) and X-ray Energy Dispersive energy (EDS) technique. Electrical and photoresponse properties of the p-Si/graphene oxide: Cu2ZnSnS4 nanocomposites diodes were investigated by current-voltage and capacitance-conductance-voltages characteristics under dark and various illumination conditions. The photocurrent of the diodes is larger than the dark current suggesting that the prepared diodes exhibited photodiode behavior. The photoconducting mechanism of the diodes was analyzed and it was found that the photoconduction mechanism is controlled by the monomolecular recombination. The diodes exhibited also a photocapacitor behavior. The photoelectrical properties of Au/GO:Cu2ZnSnS4/p-Si/Al devices indicate that the prepared diodes can be used both as a photodiode and a photocapacitor in optoelectronic device applications. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：561 / 569

页数：9

共 44 条

[1] High performance organic-on-inorganic hybrid photodiodes based on organic semiconductor-graphene oxide blends [J].

Al-Hartomy, Omar A. ;

Gupta, R. K. ;

Al-Ghamdi, Ahmed. A. ;

Yakuphanoglu, F. .

SYNTHETIC METALS, 2014, 195 :217-221

[2] Electrical and interface state density properties of the 4H-nSiC/[6,6]-phenyl C61-butyric acid methyl ester/Au diode [J].

Aydin, M. E. ;

Yakuphanoglu, Fahrettin .

MICROELECTRONIC ENGINEERING, 2008, 85 (08) :1836-1841

[3]

Bube R.H., 1960, Photoconductivity of Solids

[4] The effects of Al doping on the optical constants of ZnO thin films prepared by spray pyrolysis method [J].

Caglar, Mujdat ;

Ilican, Saliha ;

Caglar, Yasemin ;

Yakuphanoglu, Fahrettin .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2008, 19 (8-9) :704-708

[5] ZnO nanowire Schottky barrier ultraviolet photodetector with high sensitivity and fast recovery speed [J].

Cheng, Gang ;

Wu, Xinghui ;

Liu, Bing ;

Li, Bing ;

Zhang, Xingtang ;

Du, Zuliang .

APPLIED PHYSICS LETTERS, 2011, 99 (20)

[6]

Chet S., 2009, J AM CHEM SOC, V13, P12554

[7] Multilayer graphene films as transparent electrodes for organic photovoltaic devices [J].

Choi, Yoon-Young ;

Kang, Seong Jun ;

Kim, Han-Ki ;

Choi, Won Mook ;

Na, Seok-In .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2012, 96 (01) :281-285

[8] Reduced graphene oxide films as transparent counter-electrodes for dye-sensitized solar cells [J].

Cruz, Rui ;

Pacheco Tanaka, David Alfredo ;

Mendes, Adelio .

SOLAR ENERGY, 2012, 86 (02) :716-724

[9] Novel photosensor based on carbon nitride thin films [J].

Gupta, R. K. ;

Al-Ghamdi, Ahmed. A. ;

El-Tantawy, F. ;

Farooq, W. A. ;

Yakuphanoglu, F. .

MATERIALS LETTERS, 2014, 134 :149-151

[10] p-Si/DNA photoconductive diode for optical sensor applications [J].

Gupta, R. K. ;

Yakuphanoglu, F. ;

Hasar, H. ;

Al-Khedhairy, Abdulaziz A. .

SYNTHETIC METALS, 2011, 161 (17-18) :2011-2016

← 1 2 3 4 5 →