Electrodeposition of ZnO Thin Films with Controllable Impurities And Microstructures

被引：2

作者：

Chen, Xu ^{[1
]}

Luo, De-Ying ^{[1
]}

Li, Jun-Jie ^{[1
]}

Wang, Xu ^{[1
]}

Feng, Yuan-Fei ^{[1
]}

Xu, Zhe ^{[1
]}

Xiao, Hui ^{[1
]}

Man, Jia-Xiu ^{[1
]}

Liu, Yong-Jun ^{[2
]}

Liu, Zhu ^{[1
]}

机构：

[1] Yunnan Univ, Sch Phys Sci & Technol, Kunming 650091, Yunnan, Peoples R China

[2] Yunnan Univ, Adv Anal & Measurement Ctr, Kunming 650091, Yunnan, Peoples R China

来源：

CHINA FUNCTIONAL MATERIALS TECHNOLOGY AND INDUSTRY FORUM | 2013年 / 320卷

关键词：

Eletrodeposition ZnO film; Impurity; Oxygen vacancy; RAY PHOTOELECTRON-SPECTROSCOPY; DOPED ZNO; ELECTROCHEMICAL DEPOSITION; NANOWIRE ARRAY; DESIGN; GROWTH;

D O I：

10.4028/www.scientific.net/AMM.320.196

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

To enhance the conductivity and reduce the surface roughness of ZnO films, electrodeposition of ZnO films on the ITO substrate had been studied for the application of inverted organic solar cells. ZnO films with the grain size range from 0.4 to 2 mu m had been fabricated by varying the temperature, ion concentration and deposition potentials. Moreover, ZnO films with the impurity energy level of 2.28 +/- 0.20 eV origin from the oxygen vacancy, had been found in the PL emission. It is found that as the applied potential went more negative, the concentration of the oxygen vacancies increased, and the emission peak of the impurity level had higher intensity By changing the ion concentration and temperature of the electrolyte, the controllable microstructure and impurity levels of ZnO thin films had been achieved.

引用

页码：196 / +

页数：3

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