Structural properties of CuInSe2 films prepared by selenization of metallic precursors on MoNx film substrates

被引：2
作者：
Jiang, FD [1 ]
Zhang, L [1 ]
Feng, JY [1 ]
机构：
[1] Tsinghua Univ, Key Lab Adv Mat, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 08期
关键词：
magnetron sputtering; selenization; preferred orientation; ordered defect compound;
D O I：
10.1016/j.apsusc.2005.05.011
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The aim of this work was to study the effect of MoNx film substrates on the structural properties of CuInSe2 films prepared by selenization of metallic Cu-In alloy precursors. MoNx films were prepared by reactive dc-magnetron sputtering. All the CuInSe2 films exhibit single phase chalcopyrite structure with (1 1 2) preferred orientation, which can be explained by the reduction of lattice mismatch between CuInSe2 and MoNx. The bulk composition of selenized CuInSe2 films are near stoichiometric, but the surface composition analysis suggests Cu deficiency on surface area. Furthermore, ordered defect compound, CuIn2Se3 5 is found on the surface of CuInSe2 films. The results will be helpful for fabricating Cd-free ZnO buffer layer CuInSe2 and Cu(In1-xGax)Se-2 based thin film solar cells. (c) 2005 Elsevier B.V. All rights reserved.
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收藏
页码：3051 / 3057
页数：7
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