Voltage Acceleration and Pulse Dependence of Barrier Breakdown in MgO Based Magnetic Tunnel Junctions

被引：0
|
作者：
Van Beek, S. [2 ]
Martens, K. [2 ]
Roussel, P. [1 ]
Donadio, G. [1 ]
Swerts, J. [1 ]
Mertens, S. [1 ]
Thean, A. [1 ]
Kar, G. [1 ]
Furnemont, A. [1 ]
Groeseneken, G. [2 ]
机构：
[1] IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium
[2] Katholieke Univ Leuven, Dept ESAT, Kasteelpk Arenberg 10, B-3001 Heverlee, Belgium
来源：
2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2016年
关键词：
component; MgO; STT-MRAM; MTJ; Voltage acceleration; barrier breakdown; RF-BD; pulsed breakdown; ROOM-TEMPERATURE; MAGNETORESISTANCE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
STT-MRAM is a promising non-volatile memory. For reliable lifetime predictions, a correct voltage acceleration model is essential. However, there is no consensus over what acceleration model to use. In this paper we study barrier breakdown time over an extended time range. With a maximum likelihood ratio method, we test the statistical significance of fits for different voltage acceleration models. We find that the power law best describes voltage acceleration. In addition we observe that the breakdown time is independent of duty cycle or pulse width.
引用
收藏
页数：4
相关论文
共 50 条
  • [41] Junction area dependence of breakdown characteristics in magnetic tunnel junctions
    Kim, KS
    Cho, BK
    Kim, TW
    Park, WJ
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) : 8364 - 8366
  • [42] Stress polarity dependence of breakdown characteristics in magnetic tunnel junctions
    Kim, Kwang-Seok
    Jang, Y. M.
    Nam, C. H.
    Lee, Ki-Su
    Cho, B. K.
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)
  • [43] MgO-based double barrier magnetic tunnel junctions with thin free layers
    Feng, G.
    van Dijken, Sebastiaan
    Coey, J. M. D.
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (07)
  • [44] Temperature dependence of energy barrier in CoFeB-MgO magnetic tunnel junctions with perpendicular easy axis
    Takeuchi, Y.
    Sato, H.
    Fukami, S.
    Matsukura, F.
    Ohno, H.
    APPLIED PHYSICS LETTERS, 2015, 107 (15)
  • [45] Direct imaging of the structural change generated by dielectric breakdown in MgO based magnetic tunnel junctions
    Thomas, A.
    Drewello, V.
    Schaefers, M.
    Weddemann, A.
    Reiss, G.
    Eilers, G.
    Muenzenberg, M.
    Thiel, K.
    Seibt, M.
    APPLIED PHYSICS LETTERS, 2008, 93 (15)
  • [46] Temperature dependence of inverted tunneling magnetoresistance in MgO-based magnetic tunnel junctions
    Feng, J. F.
    Feng, Gen
    Ma, Q. L.
    Han, X. F.
    Coey, J. M. D.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2010, 322 (9-12) : 1446 - 1448
  • [47] Static and Dynamic Analysis of Magnetic Tunnel Junctions With Wedged MgO Barrier
    Caprile, Ambra
    Manzin, Alessandra
    Coisson, Marco
    Pasquale, Massimo
    Schumacher, Hans W.
    Liebing, Niklas
    Sievers, Sybille
    Ferreira, Ricardo
    Serrano-Guisan, Santiago
    Paz, Elvira
    IEEE TRANSACTIONS ON MAGNETICS, 2015, 51 (01)
  • [48] Magnetoresistance in magnetic tunnel junctions with an organic barrier and an MgO spin filter
    Szulczewski, Greg
    Tokuc, Huseyin
    Oguz, Kaan
    Coey, J. M. D.
    APPLIED PHYSICS LETTERS, 2009, 95 (20)
  • [49] Barrier Breakdown mechanisms in MgO-based Magnetic Tunnel Junctions under pulsed conditions and correlation with low-frequency Noise
    Amara-Dababi, S.
    Bea, H.
    Sousa, R. C.
    Baraduc, C.
    Mackay, K.
    Dieny, B.
    SPINTRONICS V, 2012, 8461
  • [50] Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions
    Gan, H. D.
    Ikeda, S.
    Shiga, W.
    Hayakawa, J.
    Miura, K.
    Yamamoto, H.
    Hasegawa, H.
    Matsukura, F.
    Ohkubo, T.
    Hono, K.
    Ohno, H.
    APPLIED PHYSICS LETTERS, 2010, 96 (19)
12345