Voltage Acceleration and Pulse Dependence of Barrier Breakdown in MgO Based Magnetic Tunnel Junctions

被引：0
|
作者：
Van Beek, S. [2 ]
Martens, K. [2 ]
Roussel, P. [1 ]
Donadio, G. [1 ]
Swerts, J. [1 ]
Mertens, S. [1 ]
Thean, A. [1 ]
Kar, G. [1 ]
Furnemont, A. [1 ]
Groeseneken, G. [2 ]
机构：
[1] IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium
[2] Katholieke Univ Leuven, Dept ESAT, Kasteelpk Arenberg 10, B-3001 Heverlee, Belgium
来源：
2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2016年
关键词：
component; MgO; STT-MRAM; MTJ; Voltage acceleration; barrier breakdown; RF-BD; pulsed breakdown; ROOM-TEMPERATURE; MAGNETORESISTANCE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
STT-MRAM is a promising non-volatile memory. For reliable lifetime predictions, a correct voltage acceleration model is essential. However, there is no consensus over what acceleration model to use. In this paper we study barrier breakdown time over an extended time range. With a maximum likelihood ratio method, we test the statistical significance of fits for different voltage acceleration models. We find that the power law best describes voltage acceleration. In addition we observe that the breakdown time is independent of duty cycle or pulse width.
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页数：4
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