Radiation enhanced growth rates during plasma oxidation of silicon

Plasma oxidation represents a good alternative method of obtaining low temperature, good electrical quality thin dielectric films. By using light irradiation during growth an enhancement in the growth rates may be obtained, even at low temperatures (95-140 degrees C). The experimental results are compared with typical values, obtained from a system without any irradiation during processing. For both cases a linear-parabolic growth law is valid; however in order to explain the experimental results, we show that the charge carriers generated by the light heating system generate an important increase in the electric field at the interface, leading to a significant increase of oxidation reaction rate. The results are important both for the theoretical understanding of plasma oxidation and for the design of very low temperature (<100 degrees C) plasma anodisation equipment. (C) 1999 Elsevier Science S.A. All rights reserved.