Electron field emission from SiC Si heterostrucutres synthesized by carbon implantation using a MEVVA ion source

被引：0

作者：

Chen, DH ^{[1
]}

Wong, SP ^{[1
]}

Cheung, WY ^{[1
]}

Luo, EZ ^{[1
]}

Wu, W ^{[1
]}

Xu, JB ^{[1
]}

Wilson, IH ^{[1
]}

Kwok, RWM ^{[1
]}

机构：

[1] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong

来源：

1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Planar SiC/Si heterostructures were formed by high dose carbon implantation using a metal vapor vacuum are ion source. The variations of the field emission properties with the implant dose and annealing conditions were studied A remarkably low turn-on field of IV/mu m was observed from a sample implanted at 35 keV to a dose of 1.0x10(18) cm(-2) with subsequent annealing in nitrogen at 1200 degrees C for 2h. The chemical composition depth profiles were determined from x-ray photoelectron spectroscopy and the surface morphology was observed by atomic force microscopy. The formation of a thin surface stoichiometric SiC layer and the formation of densely distributed small protrusions on the surface are believed to be the two factors responsible for the efficient electron field emission.

引用

页码：803 / 806

页数：4

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