Comparison of GaN and 6H-SiC p-i-n photodetectors with excellent ultraviolet sensitivity and selectivity

被引:27
作者
Torvik, JT [1 ]
Pankove, JI [1 ]
Van Zeghbroeck, BJ [1 ]
机构
[1] Univ Colorado, Dept Elect & Comp Engn, Boulder, CO 80309 USA
基金
美国国家航空航天局;
关键词
gallium nitride; silicon carbide; ultraviolet photodetectors; wide bandgap semiconductors;
D O I
10.1109/16.772472
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We fabricated GaN and 6H-SiC p-i-n photodetectors and compared their electrical and optical characteristics. The GaN diodes suffered from significant leakage current of 37 mu A/mm(2) at -5 V, while the SiC diode leakage current was below the noise level at 10 pA/mm(2) at -20 V, The built-in potentials and the unintentional "i-layer" doping densities were obtained from capacitance-voltage (C-V) measurements. The SiC detectors exhibited a broad spectral response in contrast to the abrupt cutoff observed in the GaN detectors. The peak responsivities of the GaN and SiC photodetectors corresponded to internal quantum efficiencies of 57% at 3.42 eV and 82% at 4.49 eV, respectively. Furthermore, both detectors exhibited excellent visible rejection ratios which is needed for solar-blind applications. The response times at zero bias were 18 and 102 ns for the GaN and SIC detectors, respectively.
引用
收藏
页码:1326 / 1331
页数:6
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