Effects of composition and structure on hydrogen incorporation in tungsten oxide films deposited by sputtering

被引：5

作者：

Inouye, Alchi ^{[1
]}

Yamamoto, Shunya ^{[2
]}

Nagata, Shinji ^{[1
]}

Yoshikawa, Masahito ^{[2
]}

Shikama, Tatsuo ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Japan Atom Energy Agcy, Quantum Beam Sci Directorate, Takasaki, Gunma 3701292, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2008年 / 266卷 / 15期

基金：

日本学术振兴会;

关键词：

tungsten oxide; hydrogen; sputtering; ERDA;

D O I：

10.1016/j.nimb.2008.05.008

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The effects of composition and structure on hydrogen incorporation in tungsten oxide films were investigated. Films were deposited on carbon and SiO2 substrates using a reactive sputtering by varying the substrate temperature from 30 to 600 degrees C in argon and oxygen mixture. The films were characterized using X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), elastic recoil detection analysis (ERDA) and Raman scattering. XRD patterns showed amorphous structure in the films deposited below 400 degrees C and (010) oriented monoclinic WO3 in the films deposited beyond 400 degrees C. The results of RBS and ERDA indicated that hydrogen concentration in the amorphous films increased from 0.1 to 0.7 H/W with changing the composition from WO0.25 to WO3. The hydrogen concentration in WO3 films decreased to 0.4 H/W with increasing the substrate temperature during deposition. The Raman spectra of the WO3 films revealed that decreasing of W6+=0 terminals was related to decreasing of the hydrogen concentration. It was considered that the incorporated hydrogen in tungsten oxide films was bonded at the end of W6+ =0 terminals. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：3381 / 3386

页数：6

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