Gallium and indium co-doped ZnO thin films for white light emitting diodes

被引：20

作者：

Chirakkara, Saraswathi ^{[1
]}

Krupanidhi, S. B. ^{[1
]}

机构：

[1] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2012年 / 6卷 / 01期

关键词：

ZnO; doping; multilayers; photoluminescence;

D O I：

10.1002/pssr.201105455

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ga and In co-doped ZnO (GIZO) thin films together with ZnO, In-doped ZnO (IZO), Ga-doped ZnO (GZO), and IZO/GZO multilayer for comparison, were grown on corning glass and boron doped Si substrates by PLD. The photoluminescence spectra of GIZO showed a strong white light emission and the current-voltage characteristics showed relatively lower turn-on voltage and larger forward current. The CIE coordinates for GIZO were observed to be (0.31, 0.33) with a correlated colour temperature of 6650 K, indicating a cool white light, and establishing a possibility of white light emitting diodes. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：34 / 36

页数：3

共 7 条

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