12.5-Gb/s operation with 0.29-V.cm VπL using silicon Mach-Zehnder modulator based-on forward-biased pin diode

被引：65

作者：

Akiyama, Suguru ^{[2
]}

Baba, Takeshi ^{[2
]}

Imai, Masahiko ^{[2
]}

Akagawa, Takeshi ^{[2
]}

Takahashi, Masashi ^{[1
,2
]}

Hirayama, Naoki ^{[1
,2
]}

Takahashi, Hiroyuki ^{[2
]}

Noguchi, Yoshiji ^{[1
,2
]}

Okayama, Hideaki ^{[2
]}

Horikawa, Tsuyoshi ^{[1
,2
]}

Usuki, Tatsuya ^{[2
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki, Japan

[2] Inst Photon Elect Convergence Syst Technol PECST, Tsukuba, Ibaraki 3058569, Japan

来源：

OPTICS EXPRESS | 2012年 / 20卷 / 03期

基金：

日本学术振兴会;

关键词：

HIGH-SPEED; OPTICAL MODULATORS; WAVE-GUIDE; PLATFORM; COMPACT;

D O I：

10.1364/OE.20.002911

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present high-speed operation of pin-diode-based silicon Mach-Zehnder modulators that have side-wall gratings on both sides of the waveguide core. The use of pre-emphasis signals generated with a finite impulse response digital filter was examined in the frequency domain to show how the filter works for different filter parameter sets. In large signal modulation experiments, V pi L as low as 0.29 V.cm was obtained at 12.5 Gb/s using a fabricated modulator and the pre-emphasis technique. Operation of up to 25-Gb/s is possible using basically the same driving configurations. (C) 2012 Optical Society of America

引用

页码：2911 / 2923

页数：13

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