Quantum transport modeling of defected graphene nanoribbons

被引:9
作者
Deretzis, I. [1 ,2 ]
Fiori, G. [4 ]
Iannaccone, G. [4 ]
Piccitto, G. [3 ]
La Magna, A. [1 ]
机构
[1] Ist Microelettr & Microsistemi CNR IMM, I-95121 Catania, Italy
[2] Univ Catania, Scuola Super, I-95123 Catania, Italy
[3] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy
[4] Dipartimento Ingn Informaz, I-56122 Pisa, Italy
关键词
GAPS;
D O I
10.1016/j.physe.2010.06.024
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We study backscattering phenomena during conduction for graphene nanoribbons of mu m lengths, from single vacancy scatterers up to finite defect concentrations. Using ab initio calibrated Hamiltonian models we highlight the importance of confinement and geometry on the shaping of the local density of states around the defects that can lead to important alterations on the transport process, giving rise to impuritylike conduction gaps in the conductance distribution. Within a statistical analysis of finite defect concentration we show that conductance degradation can become very important. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:981 / 984
页数:4
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