Horizontal HALL devices: A lumped-circuit model for EDA simulators

被引:20
作者
Dimitropoulos, P. D. [1 ]
Drljaca, P. M. [1 ]
Popovic, R. S. [1 ]
Chatzinikolaou, P.
机构
[1] Swiss Fed Inst Technol, IMM, CH-1015 Lausanne, Switzerland
关键词
magnetometer; HALL effect; SPICE; lumped model; EDA simulator;
D O I
10.1016/j.sna.2007.11.030
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A completely scalable lumped-circuit model for horizontal HALL devices is presented therein that can be efficiently implemented in SPICE-like EDA simulators. The model has been employed for the quantitative analysis of: (a) geometrical, (b) temperature, and (c) field-dependent mobility effects, as well as for (d) the dynamic response and (e) the noise behavior of several HALL sensors. A series of experimental data is presented along with a review to junction field effect transistor (JFET) operation theory. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:161 / 175
页数:15
相关论文
共 39 条
[1]   NUMERICAL MODELING OF MAGNETIC-FIELD-SENSITIVE SEMICONDUCTOR-DEVICES [J].
ANDOR, L ;
BALTES, HP ;
NATHAN, A ;
SCHMIDTWEINMAR, HG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (07) :1224-1230
[2]  
[Anonymous], 2002, MICROSYSTEM DESIGN
[5]   TWO-DIMENSIONAL NUMERICAL-ANALYSIS OF A SILICON MAGNETIC-FIELD SENSOR [J].
BALTES, HP ;
ANDOR, L ;
NATHAN, A ;
SCHMIDTWEINMAR, HG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (07) :996-999
[6]   Micro-Hall devices: performance, technologies and applications [J].
Boero, G ;
Demierre, M ;
Besse, PA ;
Popovic, RS .
SENSORS AND ACTUATORS A-PHYSICAL, 2003, 106 (1-3) :314-320
[7]  
CARUNTU G, 2001, P INT SEM C CAS, V2, P375
[8]   GENERAL THEORY FOR PINCHED OPERATION OF JUNCTION-GATE FET [J].
GREBENE, AB ;
GHANDHI, SK .
SOLID-STATE ELECTRONICS, 1969, 12 (07) :573-+
[10]   CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS [J].
HOWER, PL ;
BECHTEL, NG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) :213-220